H5ANAG6NCJR Datasheet, SDRAM, Hynix Semiconductor

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H5ANAG6NCJR Features and benefits

and Ordering Information FEATURES
* VDD=VDDQ=1.2V +/- 0.06V
* Fully differential clock inputs (CK, CK) operation
* Differential Data Strobe (DQS, DQS)
*.

H5ANAG6NCJR Application

which requires large memory density and high bandwidth. SK hynix 16Gb DDR4 SDRAMs offer fully synchronous operations ref.

H5ANAG6NCJR Description

The H5ANAG4NCJR-xxC, H5ANAG8NCJR-xxC, H5ANAG6NCJR-xxC are a 16Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 16Gb DDR4 SDRAMs offer.

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