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HY57V281620HLT Datasheet (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM

Manufacturer: SK Hynix

Download the HY57V281620HLT datasheet PDF. This datasheet also includes the HY57V281620HCT variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (HY57V281620HCT_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16 HY57V281620HC(L/S)T is offering fully synchronous operation referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

Overview

( DataSheet : www.DataSheet4U.com ) 0.1 : Hynix Change 0.2 : 143Mhz Add, Burst read single write mode correction www.DataSheet4U.com www.DataSheet4U.

Key Features

  • Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM or LDQM Internal four banks operation.
  • Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
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