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HY57V281620ELTP - Synchronous DRAM Memory 128Mbit (8M x 16bit)

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Hynix Semiconductor

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HY57V281620ELTP Synchronous DRAM Memory 128Mbit (8M x 16bit) by Hynix Semiconductor - Datasheet Preview — Datasheet preview – HY57V281620ELTP

Datasheet Details

Part number	HY57V281620ELTP
Manufacturer	Hynix Semiconductor
File Size	120.33 KB
Description	Synchronous DRAM Memory 128Mbit (8M x 16bit)
Datasheet	HY57V281620ELTP Datasheet
Note	This datasheet PDF includes multiple part numbers: HY57V281620ELTP, HY57V281620ELT. Please refer to the document for exact specifications by model.
Additional preview pages of the HY57V281620ELTP datasheet.

Product details

Description

and is subject to change without notice.

Features

Voltage: VDD, VDDQ 3.3V supply voltage.
4096 Refresh cycles / 64ms.
All device pins are compatible with LVTTL interface.
Programmable Burst Length and Burst Type.
54 Pin TSOPII (Lead or Lead Free Package) - 1, 2, 4, 8 or full page for Sequential Burst.
All inputs and outputs referenced to positive edge of system clock.
Data mask function by UDQM, LDQM.
Internal four banks operation.
Auto refresh and self refre.

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Other Datasheets by Hynix Semiconductor

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HY57V281620EST - Synchronous DRAM Memory 128Mbit (8M x 16bit)
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Published: Nov 14, 2018 |