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HY57V281620ELT

HY57V281620ELT is Synchronous DRAM Memory manufactured by SK Hynix.
HY57V281620ELT datasheet preview

HY57V281620ELT Datasheet

Part number HY57V281620ELT
Download HY57V281620ELT Datasheet (PDF)
File Size 120.33 KB
Manufacturer SK Hynix
Description Synchronous DRAM Memory
HY57V281620ELT page 2 HY57V281620ELT page 3

HY57V281620ELT Overview

and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY57V281620ELT Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage All device pins are patible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free
  • Internal four banks operation
  • Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or full page for Sequential Burst
  • 1, 2, 4 or 8 for Interleave Burst

Related SK Hynix Datasheets

Part Number Description
HY57V281620ELTP Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620EST Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620ET Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620ETP Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM

HY57V281620ELT Distributor

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