HY57V281620ELT - Synchronous DRAM Memory

Product Overview

Hynix Semiconductor

Part number	HY57V281620ELT
Manufacturer	Hynix Semiconductor
File Size	120.33 KB
Description	Synchronous DRAM Memory
Datasheet	HY57V281620ELT Datasheet
Additional preview pages of the HY57V281620ELT datasheet.

and is subject to change without notice.

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Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface 54 Pin TSOPII (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM.
Internal four banks operation.
Burst Read Single Write operation Programmable CAS Latency; 2, 3 Clocks.
Auto refresh and self refresh 4096 Refresh cycles / 64m.

Other Datasheets by Hynix Semiconductor

HY57V281620ELTP - Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620EST - Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620ET - Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620ETP - Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620A - 4 Banks x 2M x 16bits Synchronous DRAM
HY57V281620FLTP - Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620FSTP - Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620FTP - Synchronous DRAM Memory 128Mbit (8Mx16bit)

Published: Sep 26, 2005 |