HY57V281620A - 4 Banks x 2M x 16bits Synchronous DRAM

Product Overview

Hynix Semiconductor

Part number	HY57V281620A
Manufacturer	Hynix Semiconductor
File Size	81.40 KB
Description	4 Banks x 2M x 16bits Synchronous DRAM
Datasheet	HY57V281620A Datasheet
Additional preview pages of the HY57V281620A datasheet.

low power consumption and extended temperature range .

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch - 1, 2, 4, 8 or Full page for Sequential Burst.
All inputs and outputs referenced to positive edge of system clock.
Data mask function by UDQM or LDQM Internal four banks operation.
- 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency ; 2, 3 Clocks.
Auto.

Other Datasheets by Hynix Semiconductor

HY57V281620ELT - Synchronous DRAM Memory
HY57V281620ELTP - Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620EST - Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620ET - Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620ETP - Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620FLTP - Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620FSTP - Synchronous DRAM Memory 128Mbit (8Mx16bit)
HY57V281620FTP - Synchronous DRAM Memory 128Mbit (8Mx16bit)

Published: Sep 26, 2005 |