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HY57V281620EST Datasheet

Manufacturer: SK Hynix
HY57V281620EST datasheet preview

HY57V281620EST Details

Part number HY57V281620EST
Datasheet HY57V281620EST HY57V281620ELT Datasheet (PDF)
File Size 120.33 KB
Manufacturer SK Hynix
Description Synchronous DRAM Memory 128Mbit (8M x 16bit)
HY57V281620EST page 2 HY57V281620EST page 3

HY57V281620EST Overview

and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY57V281620EST Key Features

  • Voltage: VDD, VDDQ 3.3V supply voltage
  • 4096 Refresh cycles / 64ms
  • All device pins are patible with LVTTL interface
  • Programmable Burst Length and Burst Type
  • 54 Pin TSOPII (Lead or Lead Free Package)
  • 1, 2, 4, 8 or full page for Sequential Burst
  • All inputs and outputs referenced to positive edge of system clock
  • Data mask function by UDQM, LDQM
  • Internal four banks operation
  • Auto refresh and self refresh

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