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HY57V64420HG Datasheet 4 Banks x 4M x 4Bit Synchronous DRAM

Manufacturer: SK Hynix

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General Description

The Hynix HY57V64420HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V64420HG is organized as 4banks of 4,194,304x4.

HY57V644020HG is offering fully synchronous operation referenced to a positive edge of the clock.

Overview

www.DataSheet4U.com HY57V64420HG 4 Banks x 4M x 4Bit Synchronous.

Key Features

  • Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
  • Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
  • - 1, 2, 4 o.

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