2N6212
2N6212 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- With TO-3 packaging
- Very high DC current gain
- Monolithic darlington transistor with integrated antiparallel collector-emitter diode
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Electronic ignition
- Alternator regulator
- Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO VCEO VEBO
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous
-350 -300
-6 -2
Collector Current-Peak
-5
Collector Current-Continuous
-1
Collector Power Dissipation @ TC=25℃
Junction Temperature
Tstg
Storage Temperature Range
-65~200
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 5.0 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor
INCHANGE...
