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2N6212 Datasheet Preview

2N6212 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6212
DESCRIPTION
·With TO-3 packaging
·Very high DC current gain
·Monolithic darlington transistor with integrated
antiparallel collector-emitter diode
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Electronic ignition
·Alternator regulator
·Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
-350
-300
-6
-2
ICM
Collector Current-Peak
-5
IB
Collector Current-Continuous
-1
PC
Collector Power Dissipation
@ TC=25
35
TJ
Junction Temperature
200
Tstg
Storage Temperature Range
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N6212 Datasheet Preview

2N6212 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2N6212
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -200mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -0.5mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -125mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -125mA
ICEV
Collector Cutoff Current
VCE= -315V; VBE(off)= -1.5V
ICEO
Collector Cutoff Current
VCE= -150V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -2.8V
hFE-2
DC Current Gain
IC= -1A ; VCE= -3.2V
hFE-3
DC Current Gain
IC= -1A ; VCE= -4.0V
MIN TYP. MAX UNIT
-300
V
-6
V
-1.4
V
-1.4
V
-0.5 mA
-5.0 mA
-0.5 mA
10
100
10
100
10
100
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N6212
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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2N6212 Datasheet PDF





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