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2N6286 Datasheet Preview

2N6286 Datasheet

PNP Transistor

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isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 750 (Min) @ IC = -10 Adc
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -80V(Min)
·Complement to type 2N6283
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Intended for general purpose amplifier and low frequency
switching applications, such as linear and switching indu-
strial equipment.
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current -Continuous
-20
A
ICP
Collector Current-Peak
-40
A
IB
Base Current
-0.5
A
PC
Collector Power Dissipation@TC=25160
W
Tj
Junction Temperature
150
Tstg
Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c ThermalResistance, Junction to Case 1.09 /W
2N6286
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2N6286 Datasheet Preview

2N6286 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Darlingtion Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -20A; IB= -200mA
VBE(sat) Base-Emitter Saturation voltage
IC= -20A; IB= -200mA
VBE(on) Base-Emitter On voltage
IC= -10A; VCE= -3V
ICEO
Collector Cutoff current
VCE= -40V; IB=0
IEBO
Emitter Cut-off current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -10A; VCE= -3V
hFE-2
DC Current Gain
IC= -20A; VCE= -3V
COB
Output Capacitance
IE= 0; VCB= -10V;ftest= 1.0MHz
2N6286
MIN MAX UNIT
-80
V
-2.0
V
-3.0
V
-4.0
V
-2.8
V
-1.0
mA
-2.0
mA
750 18000
100
600
pF
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2N6286
Description PNP Transistor
Maker INCHANGE
Total Page 2 Pages
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