Inchange Semiconductor 2N6668
Silicon PNP Power Transistor
| Part No. | 2N6668 |
|---|---|
| Datasheet | 2N6668 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain- : hFE = 1000(Min)@ IC= -5A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min)
●Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A
●Complement to Type 2N6388
APPLICATIONS
●Designed for general purpose amplifier and low speed switching applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current-DC Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature -250 65 2 150 mA W ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃/W Rth j-a T