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2SA1145 Datasheet Preview

2SA1145 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Low collector output capacitance
·High frequency
·Complement to 2SC2705
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio frequency amplifier application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
PC
Total Power Dissipation
@ TC=25
TJ
Junction Temperature
-50
mA
0.8
W
150
Tstg
Storage Temperature Range
-55~150
2SA1145
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark




INCHANGE

2SA1145 Datasheet Preview

2SA1145 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -10mA; IB= -1mA
VBE(on) Base-Emitter Voltage
IC= -10mA;VCE= -5V
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -10mA; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -10mA; VCE= -10V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
hFE Classifications
O
Y
80-160 120-240
2SA1145
MIN TYP. MAX UNIT
-150
V
-1
V
-0.8
V
-0.1 μA
-0.1 μA
80
240
200
MHz
2.5
pF
isc websitewww.iscsemi.com
isc & iscsemi is registered trademark



Part Number 2SA1145
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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2SA1145 Datasheet PDF





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