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2SA1145 - PNP Transistor

Description

Low collector output capacitance High frequency Complement to 2SC2705 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO

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isc Silicon PNP Power Transistor DESCRIPTION ·Low collector output capacitance ·High frequency ·Complement to 2SC2705 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -50 mA 0.8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1145 isc website： www.iscsemi.
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