Download the 2SA1220A datasheet PDF.
This datasheet also covers the 2SA1220 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
Good Linearity of hFE
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A
Complement to Type 2SC2690/A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Adudio frequency power amplifier
Full PDF Text Transcription for 2SA1220A (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SA1220A. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1...
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er Breakdown Voltage- : V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A ·Complement to Type 2SC2690/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Adudio frequency power amplifier ·High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SA1220 -120 VCBO Collector-Base Voltage V 2SA1220A -160 2SA1220 -120 VCEO Collector-Emitter Voltage V 2SA1220A -160 VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃