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2SB1253 Datasheet Preview

2SB1253 Datasheet

PNP Transistor

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isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB1253
DESCRIPTION
·High DC Current Gain-
: hFE= 5000(Min)@IC= -5A
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -5A
·Complement to Type 2SD1893
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ
Junction Temperature
-10
A
50
W
3
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SB1253 Datasheet Preview

2SB1253 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
2SB1253
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -5mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -5mA
ICBO
Collector Cutoff Current
VCB= -130V; IE= 0
ICEO
Collector Cutoff Current
VCE= -110V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -5A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -5A; IB1= -IB2= -5mA,
VCC= -50V,
MIN TYP. MAX UNIT
-110
V
-2.5
V
-3.0
V
-100 μA
-100 μA
-100 μA
2000
5000
30000
20
MHz
0.9
μs
2.5
μs
1.7
μs
hFE-2 Classifications
Q
P
5000-15000 8000-30000
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SB1253
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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2SB1253 Datasheet PDF





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