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2SB1605 - PNP Transistor

General Description

High-speed Switching Low Collector to Emitter Saturation Voltage : VCE(sat)= -1.2V(Max.)@IC= -3A Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw Minimum Lot-to-Lot variations for robust device performance and reliable operatio

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isc Silicon PNP Power Transistor DESCRIPTION ·High-speed Switching ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -1.2V(Max.)@IC= -3A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-freauency power switching and general purpose applications.