2SB612
2SB612 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
- High Power Dissipation-
: PC= 100W(Max)@TC=25℃
- plement to Type 2SD582
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Remended for 80~100W audio amplifier output stage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
VCEO
Collector-Emitter Voltage
-140
VEBO
Emitter-Base Voltage
-6
Collector Current-Continuous
-12
Collector Current-Peak
-15
Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Junction...
