2SB613
2SB613 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -250V(Min)
- High Power Dissipation-
: PC= 150W(Max)@TC=25℃
- High Current Capability
- plement to Type 2SD583
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for high power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-250
VCEO
Collector-Emitter Voltage
-250
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-15
Base Current
Collector Power Dissipation @TC=25℃
Junction Temperature
-5
℃...
