| Part number | 2SB613 |
|---|---|
| Datasheet | 2SB613-INCHANGE.pdf |
| File Size | 203.46 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -250V(Min) ·High Power Dissipation- : 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SB611 | Silicon PNP Power Transistor |
| 2SB612 | PNP Transistor |
| 2SB616 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
| 2SB604 | PNP Transistor |
| 2SB608 | PNP Transistor |
| 2SB609 | PNP Transistor |
| 2SB624 | PNP Transistor |
| 2SB625 | PNP Transistor |
