Datasheet Details
| Part number | 2SB630 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.56 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
 2SB630 Datasheet
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| Part number | 2SB630 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.56 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet |
2SB630 Datasheet
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Complement to Type 2SD610 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications.
·Suitable for driver of 200~300 watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;
isc Silicon PNP Power Transistor 2SB630.
| Part Number | Description |
|---|---|
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| 2SB634 | PNP Transistor |
| 2SB638 | PNP Transistor |
| 2SB600 | PNP Transistor |
| 2SB601 | PNP Transistor |
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| 2SB608 | PNP Transistor |