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2SB630 - Silicon PNP Power Transistor

2SB630 Description

isc Silicon PNP Power Transistor 2SB630 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min). Complement to Type 2SD610. Minimum Lot-to-Lot variations for robust device p.

2SB630 Applications

* Audio frequency power amplifier applications.
* Suitable for driver of 200~300 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Col

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Datasheet Details

Part number
2SB630
Manufacturer
INCHANGE
File Size
219.56 KB
Datasheet
2SB630-INCHANGE.pdf
Description
Silicon PNP Power Transistor

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Silicon PNP Power Transistor INCHANGE
INCHANGE 2SB630-like datasheet