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2SB630 Datasheet Preview

2SB630 Datasheet

Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor
2SB630
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
·Complement to Type 2SD610
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio frequency power amplifier applications.
·Suitable for driver of 200~300 watts audio amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-3.0
A
1.5
W
25
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
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INCHANGE

2SB630 Datasheet Preview

2SB630 Datasheet

Silicon PNP Power Transistor

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -5mA; VCE= -10V
hFE-2
DC Current Gain
IC= -0.5A; VCE= -10V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V
hFE-2 Classifications
S
R
Q
40-80 60-120 100-200
2SB630
MIN TYP. MAX UNIT
-1.0 V
-1.5 V
-1.0 μA
-1.0 μA
20
40
200
65
pF
4
MHz
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SB630
Description Silicon PNP Power Transistor
Maker INCHANGE
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