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2SB630 - Silicon PNP Power Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) Complement to Type 2SD610 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Audio frequency power amplifier applications.

Suitable for driver of 200~300 watts audio amp

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Datasheet Details

Part number 2SB630
Manufacturer INCHANGE
File Size 219.56 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet 2SB630 Datasheet
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isc Silicon PNP Power Transistor 2SB630 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Complement to Type 2SD610 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications. ·Suitable for driver of 200~300 watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 1.5 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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