2SB719
2SB719 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
- Wide Area of Safe Operation
- plement to Type 2SD759
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for power amplifier and TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-160
VCEO Collector-Emitter Voltage
-160
VEBO
Emitter-Base Voltage
-5.0
Collector Current-Continuous
-2
Collector Current-Peak
-3
Total Power Dissipation@ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature...
