| Part number | 2SB981 |
|---|---|
| Datasheet | 2SB981-INCHANGE.pdf |
| File Size | 215.71 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter...
See all Inchange Semiconductor datasheets
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| 2SB980 | PNP Transistor |
| 2SB982 | PNP Transistor |
| 2SB983 | PNP Transistor |
| 2SB986 | PNP Transistor |
| 2SB988 | PNP Transistor |
| 2SB989 | Silicon PNP Power Transistor |
| 2SB901 | PNP Transistor |
| 2SB919 | PNP Transistor |
| 2SB963 | PNP Transistor |
| 2SB963-Z | PNP Transistor |
