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2SC3076 Datasheet Preview

2SC3076 Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3076
DESCRIPTION
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.5V (Max.)@ IC= 1A
·Complementary to 2SA1241
·100% tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier application
·Power switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
IB
Base Current
PC
Collector Power Dissipation
Ta=25
PC
Collector Power Dissipation
TC=25
TJ
Junction Temperature
1
A
1.0
W
10
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC3076 Datasheet Preview

2SC3076 Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3076
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 50mA
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 2V
hFE-2
DC Current Gain
IC= 1.5A; VCE= 2V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE=2V
MIN TYP. MAX UNIT
0.5
V
1.2
V
50
V
1
uA
1
uA
70
240
40
30
pF
80
MHz
hFE-1 Classifications
O
70-140
Y
120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SC3076
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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2SC3076 Datasheet PDF





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