2SC3177 Overview
·With TO-126 packaging ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Voltage IC=0.1mA, IE=0 VCEO Collector-Emitter Voltage IC=1mA, IB=0 VEBO Emitter-Base...