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INCHANGE

2SC3255 Datasheet Preview

2SC3255 Datasheet

NPN Transistor

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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC3255
DESCRIPTION
·Low Collector Saturation Voltage
·Good Linearity of hFE
·High Switching Speed
·Complement to Type 2SA1291
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Various inductance lamp drivers for electrical equipment
·Inverters, converters
·Power amplifier
·Switching regulator, dirver
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
12
A
40
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC3255 Datasheet Preview

2SC3255 Datasheet

NPN Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC3255
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE=
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.25A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC=1A ; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A; IB1= -IB2= 0.25A;
RL=6.67Ω; VCC= 20V
MIN TYP. MAX UNIT
60
V
80
V
5
V
0.4
V
100 μA
100 μA
70
280
100
MHz
0.1
μs
0.5
μs
0.1
μs
hFE Classifications
Q
R
S
70-140 100-200 140-280
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SC3255
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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2SC3255 Datasheet PDF





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