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isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1290 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters ·Power amplifier ·Switching regulator, dirver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
10
A
35
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3254
isc website:www.iscsemi.