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2SC3298B Datasheet Preview

2SC3298B Datasheet

NPN Transistor

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isc Silicon NPN Power Transistors
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 200V(Min)
·Complement to Type 2SA1306B
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
2SC3298B
200
V
VCEO
Collector-Emitter
Voltage
2SC3298B
200
V
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
V
1.5
A
0.15
A
20
W
150
-55~150
2SC3298B
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

2SC3298B Datasheet Preview

2SC3298B Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SC3298B
MIN TYP. MAX UNIT
V(BR)CEO
Collector-Emitter
Breakdown Voltage
2SC3298B IC= 10mA; IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 500mA; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 100mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 100mA ; VCE= 10V
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1.0MHz
1.5
V
1.0
V
1.0 μA
1.0 μA
70
240
100
MHz
25
pF
hFE Classifications
O
Y
70-140 120-240
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 2SC3298B
Description NPN Transistor
Maker INCHANGE
Total Page 3 Pages
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2SC3298B Datasheet PDF





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