2SC3298B Datasheet (PDF) Download
Inchange Semiconductor
2SC3298B

Description

Good Linearity of hFE - High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) - plement to Type 2SA1306B - Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Applications

  • Driver stage amplifier applications