2SC3298B - NPN Transistor

Inchange Semiconductor

General Description

Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) Complement to Type 2SA1306B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Driver stage amplifier applicat

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Datasheet Details

Part number	2SC3298B
Manufacturer	Inchange Semiconductor
File Size	210.61 KB
Description	NPN Transistor
Datasheet	2SC3298B Datasheet

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isc Silicon NPN Power Transistors DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Complement to Type 2SA1306B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SC3298B 200 V VCEO Collector-Emitter Voltage 2SC3298B 200 V VEBO Emitter-Base Voltage IC Collector Current-Continuous IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 5 V 1.5 A 0.15 A 20 W 150 ℃ -55~150 ℃ 2SC3298B isc website：www.iscsemi.