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2SC5128 - NPN Transistor

General Description

Collector Emitter Breakdown Voltage : V(BR)CEO= 500V(Min) High Speed Switching Full-pack package with outstanding insulation, which can be in staled to the heat sink with one screw 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5128 DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO= 500V(Min) ·High Speed Switching ·Full-pack package with outstanding insulation, which can be in staled to the heat sink with one screw ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications.