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2SD1194 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @IC= 1.5A Low Saturation Voltage Complement to Type 2SB884 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for moto

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD1194 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 1.