2SD1372 - NPN Transistor

Inchange Semiconductor

General Description

High Collector-Base Voltage- : VCBO= 300V(Min.) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

regulators,converters,inverters,motor control system.

📥 Download Datasheet

2SD1372 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1372
Manufacturer	Inchange Semiconductor
File Size	180.09 KB
Description	NPN Transistor
Datasheet	2SD1372 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SD1371	Silicon NPN Transistor	Inchange Semiconductor
2SD1375	SILICON POWER TRANSISTOR	SavantIC
2SD1376	Silicon NPN Transistor	Hitachi Semiconductor
2SD1376	SILICON POWER TRANSISTOR	SavantIC
2SD1376K	Silicon NPN Transistor	Hitachi Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SD1370	NPN Transistor
2SD1373	NPN Transistor
2SD1374	NPN Transistor
2SD1375	NPN Transistor
2SD1376	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1372 DESCRIPTION ·High Collector-Base Voltage- : VCBO= 300V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage,high-speed,power switching regulators,converters,inverters,motor control system. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.0 A ICM Collector Current-Peak 6.0 A IB Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.