2SD1393 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 0.8A Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pu

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2SD1393 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1393
Manufacturer	Inchange Semiconductor
File Size	200.31 KB
Description	NPN Transistor
Datasheet	2SD1393 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1393 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 0.8A ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.