2SD1399 Overview
·High Breakdown Voltage : VCBO= 1500V (Min) ·High Switching Speed ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1399 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-Base...
