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2SD1399 - NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage : VCBO= 1500V (Min) High Switching Speed Built-in damper diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal output applications.

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Datasheet Details

Part number 2SD1399
Manufacturer INCHANGE
File Size 210.99 KB
Description NPN Transistor
Datasheet download datasheet 2SD1399 Datasheet
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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage : VCBO= 1500V (Min) ·High Switching Speed ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 16 A 50 W 150 ℃ Tstg Storage Temperature Range -55-150 ℃ 2SD1399 isc website：www.iscsemi.
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