Datasheet Details
| Part number | 2SD1397 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.72 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1397-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD1397 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.72 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1397-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 10 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1397 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1397 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD1391 | NPN Transistor |
| 2SD1393 | NPN Transistor |
| 2SD1394 | NPN Transistor |
| 2SD1395 | NPN Transistor |
| 2SD1396 | NPN Transistor |
| 2SD1398 | NPN Transistor |
| 2SD1399 | NPN Transistor |
| 2SD130 | NPN Transistor |
| 2SD1300 | NPN Transistor |
| 2SD1301 | NPN Transistor |