2SD1394 - NPN Transistor

Inchange Semiconductor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High DC Current Gain : hFE= 2000(Min) @IC= 1.5A Low Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general pur

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2SD1394 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SD1394
Manufacturer	Inchange Semiconductor
File Size	200.03 KB
Description	NPN Transistor
Datasheet	2SD1394 Datasheet

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1394 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 1.5A ·Low Saturation Voltage ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.