2SD1804L-T
2SD1804L-T is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Excellent linearity of h FE
- Low Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50 V
- Fast switching time
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Relay drivers, high-speed inverters , converters and Other general high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
PC Collector Power Dissipation @TC=25℃
Junction Temperature
1 W
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1804L-T isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER...
