High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
Excellent Safe Operating Area
Fast Switching Speed
With TO-3 Package
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Voltage regul
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isc Silicon NPN Power Transistor
isc Product Specification
2SD198
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Excellent Safe Operating Area ·Fast Switching Speed ·With TO-3 Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Voltage regulator. ·Switching mode power supply. ·Inverters .
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VALUE UNIT
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
1
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
25
W
150
℃
-65~150 ℃
isc website：www.
2SD198 Datasheet
