Datasheet Details
| Part number | 2SD331 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 185.55 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD331-INCHANGE.pdf
|
| Part number | 2SD331 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 185.55 KB |
| Description | NPN Transistor |
| Datasheet |
2SD331-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A Complement to Type 2SB515 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Especially suited for use in output stage of 10W AF power amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO E
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