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2SD338 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR) CEO= 70V(Min) Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD338 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 70V(Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.