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2SD338 Datasheet

Manufacturer: Inchange Semiconductor
2SD338 datasheet preview

2SD338 Details

Part number 2SD338
Datasheet 2SD338-INCHANGE.pdf
File Size 192.04 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
2SD338 page 2

2SD338 Overview

·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 70V(Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC = 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.

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