Datasheet Details
| Part number | 2SD339 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 192.48 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD339-INCHANGE.pdf
|
| Part number | 2SD339 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 192.48 KB |
| Description | NPN Transistor |
| Datasheet |
2SD339-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR) CEO= 90V(Min) Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 7.5A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 90
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