Datasheet4U Logo Datasheet4U.com

2SD45 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in power amplifier and switching applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD458 Silicon NPN Power Transistors Inchange Semiconductor
2SD400 PNP / NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD400 NPN Transistor LGE
2SD400 SILICON NPN TRANSISTOR LZG
2SD400 NPN Transistor Yukuto

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD459 NPN Transistor
2SD402 NPN Transistor
2SD414 NPN Transistor
2SD424 NPN Transistor
2SD425 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD45 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 5 A 8 A 3 A 50 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.