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2SD640 - NPN Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 5A Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage s

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD640 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching applications. ·High power amplifier applications.