2SD732 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Current Capability ·plement to Type 2SB696 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD732 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...