Datasheet4U Logo Datasheet4U.com

2SD793 - NPN Transistor

Description

Collector-Emitter BreakdownVoltage- : V(BR)CEO= 30V(Min.) Low Collector to Emitter Saturation Voltage : VCE(sat)= 2.0V(Max.)@IC= 1.5A Excellent hFE linearity Complement to Type 2SB743 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

📥 Download Datasheet

Datasheet preview – 2SD793

Datasheet Details

Part number 2SD793
Manufacturer INCHANGE
File Size 183.90 KB
Description NPN Transistor
Datasheet download datasheet 2SD793 Datasheet
Additional preview pages of the 2SD793 datasheet.

📁 Similar Datasheet

  • 2SD792 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD794 - NPN Silicon Power Transistors (NEC)
  • 2SD794 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD794A - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD796 - High Speed Switching Transistors (Fuji Semiconductors)
  • 2SD797 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD797 - Silicon NPN Transistor (Toshiba)
  • 2SD798 - NPN Transistor (Toshiba)
  • 2SD798 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD799 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD793 DESCRIPTION ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= 30V(Min.) ·Low Collector to Emitter Saturation Voltage : VCE(sat)= 2.0V(Max.)@IC= 1.5A ·Excellent hFE linearity ·Complement to Type 2SB743 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and general purpose applications.
Published: |