| Part number | 2SD836 |
|---|---|
| Datasheet | 2SD836-INCHANGE.pdf |
| File Size | 191.23 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD836 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 8mA VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 2A.
See all Inchange Semiconductor datasheets
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| 2SD800 | NPN Transistor |
| 2SD803 | NPN Transistor |
| 2SD807 | NPN Transistor |
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