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2SD962 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) High DC Current Gain High Reliability Good Linearity of hFE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for se

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD962 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) ·High DC Current Gain ·High Reliability ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for series regulators ,color TV, power supplies and similar devices applications.