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3DD100A Datasheet Preview

3DD100A Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·With TO-66 packaging
·Large collector current
·Low collector saturation voltage
·High power dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in DC-DC converter
·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
1.5
A
PD
Total Power Dissipation@TC=75
20
W
TJ
Max.Junction Temperature
175
Tstg
Storage Temperature
-55~175
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
5.0
UNIT
/W
3DD100A
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




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3DD100A Datasheet Preview

3DD100A Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0
BVCBO Collector-Base Sustaining Voltage
IC= 1mA; IE= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
ICEO
Collector Cutoff Current
VCE= 50V; IB= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
3DD100A
MIN MAX UNIT
100
V
150
V
4
V
1.5
V
0.2
mA
0.5
mA
40
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number 3DD100A
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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3DD100A Datasheet PDF





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