3DD100B Description
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD100B TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 1mA; IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA;.