With TO-66 packaging
Large collector current
Low collector saturation voltage
High power dissipation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in DC-DC converter
Driver of solenoid or motor
AB
Full PDF Text Transcription for 3DD100B (Reference)
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3DD100B. For precise diagrams, and layout, please refer to the original PDF.
INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD100B DESCRIPTION ·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power d...
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arge collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 1.5 A PD Total Power Dissipation@TC=75℃ 20 W TJ Max.Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction t
3DD100B Datasheet
