With TO-3 packaging
Large collector current
Low collector saturation voltage
High power dissipation
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in DC-DC converter
Driver of solenoid or motor
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification 3DD102D
DESCRIPTION ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
5
A
PC
Collector Power Dissipation@TC=75℃
50
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c The
3DD102D Datasheet
