| Part number | 3DD102D |
|---|---|
| Datasheet | 3DD102D-INCHANGE.pdf |
| File Size | 178.66 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 3DD102D TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| Shaanxi Qunli Electric | 3DD102 | NPN Silicon Low Frequency High Power Transistor | Shaanxi Qunli Electric |
 |
3DD102 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
3DD102A | Silicon NPN Power Transistor | Inchange Semiconductor |
