Datasheet Details
| Part number | 3DD202A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.29 KB |
| Description | NPN Transistor |
| Download | 3DD202A Download (PDF) |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD202A.
| Part number | 3DD202A |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.29 KB |
| Description | NPN Transistor |
| Download | 3DD202A Download (PDF) |
|
|
|
·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 3 A PD Total Power Dissipation@TC=75℃ 50 W TJ Max.Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.5 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD202A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 5mA;
IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 5mA;
IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 0.5mA;
| Part Number | Description |
|---|---|
| 3DD202B | NPN Transistor |
| 3DD200 | Silicon Power Transistor |
| 3DD200D | NPN Transistor |
| 3DD201 | Silicon Power Transistor |
| 3DD209L | NPN Transistor |
| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |