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3DD209L - NPN Transistor

General Description

High breakdown voltage High switching speed High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Energy-saving light Electronic ballasts High frequency switching power supply High frequency po

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Energy-saving light ·Electronic ballasts ·High frequency switching power supply ·High frequency power transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A PC Collector Power Dissipation@TC=25℃ 120 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 3DD209L isc website：www.iscsemi.