Datasheet Details
| Part number | 3DD209L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.70 KB |
| Description | NPN Transistor |
| Datasheet |
 3DD209L Datasheet
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| Part number | 3DD209L |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.70 KB |
| Description | NPN Transistor |
| Datasheet |
3DD209L Datasheet
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·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Energy-saving light ·Electronic ballasts ·High frequency switching power supply ·High frequency power transform ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 12 A PC Collector Power Dissipation@TC=25℃ 120 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 3DD209L isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC=1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
3DD209L | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | Jilin Sino |
| Part Number | Description |
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| 3DD100A | NPN Transistor |
| 3DD100B | NPN Transistor |
| 3DD100C | NPN Transistor |
| 3DD100D | NPN Transistor |
| 3DD100E | NPN Transistor |