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3DD209L Datasheet Preview

3DD209L Datasheet

NPN Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High breakdown voltage
·High switching speed
·High current capability
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Energy-saving light
·Electronic ballasts
·High frequency switching power supply
·High frequency power transform
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
12
A
PC
Collector Power Dissipation@TC=25
120
W
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55~150
3DD209L
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

3DD209L Datasheet Preview

3DD209L Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC=1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A ;IB= 1.6A
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
hFE-1
DC Current Gain
IC= 5A; VCE= 10V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
3DD209L
MIN TYP MAX UNIT
400
V
700
V
9
V
1.2
V
1.8
V
1.8
V
50
uA
10
uA
8
40
5
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number 3DD209L
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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3DD209L Datasheet PDF





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