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Inchange Semiconductor
BD677
DESCRIPTION - Collector- Emitter Breakdown Voltage- : V(BR)CEO = 60V - DC Current Gain- : h FE = 750(Min) @ IC= 1.5 A - plement to Type BD678 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for use as output devices in plementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...
BD677 reference image

Representative BD677 image (package may vary by manufacturer)