| Part number | BDT61F |
|---|---|
| Datasheet | BDT61F-INCHANGE.pdf |
| File Size | 209.44 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61F TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA VBE(on) Base-Emitter On Voltage IC= 4A.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BDT61 | NPN Transistor | Bourns Electronic Solutions |
 |
BDT61A | NPN Transistor | Bourns |
|
BDT61B | NPN Transistor | Bourns |
|
BDT61C | NPN Transistor | Bourns |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDT61 | NPN Transistor |
| BDT61A | NPN Transistor |
| BDT61AF | NPN Transistor |
| BDT61B | NPN Transistor |
| BDT61BF | NPN Transistor |
| BDT61C | NPN Transistor |
| BDT61CF | NPN Transistor |
| BDT60AF | PNP Transistor |
| BDT60BF | PNP Transistor |
| BDT60CF | PNP Transistor |
