Datasheet4U Logo Datasheet4U.com

BDT61F - NPN Transistor

Datasheet Summary

Description

High DC Current Gain Low Saturation Voltage Complement to Type BDT60F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

📥 Download Datasheet

Datasheet preview – BDT61F

Datasheet Details

Part number BDT61F
Manufacturer INCHANGE
File Size 209.44 KB
Description NPN Transistor
Datasheet download datasheet BDT61F Datasheet
Additional preview pages of the BDT61F datasheet.

📁 Similar Datasheet

  • BDT61 - NPN Transistor (Bourns Electronic Solutions)
  • BDT61A - NPN Transistor (Bourns)
  • BDT61B - NPN Transistor (Bourns)
  • BDT61C - NPN Transistor (Bourns)
  • BDT60 - PNP Transistor (Power Innovations Limited)
  • BDT60 - PNP SILICON POWER DARLINGTONS (New Jersey Semi-Conductor)
  • BDT60 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • BDT60A - PNP Transistor (Power Innovations Limited)
  • BDT60A - PNP SILICON POWER DARLINGTONS (New Jersey Semi-Conductor)
  • BDT60A - Silicon PNP Power Transistor (Inchange Semiconductor)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BDT61F DESCRIPTION ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BDT60F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICP Collector Current-Peak 6 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
Published: |