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BDT61F Datasheet Preview

BDT61F Datasheet

NPN Transistor

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isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDT61F
DESCRIPTION
·High DC Current Gain
·Low Saturation Voltage
·Complement to Type BDT60F
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
4
A
ICP
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
0.1
A
17
W
25
150
Tstg
Storage Temperature Range
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
5
/W
Rth j-a Thermal Resistance,Junction to Ambient 7.35 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

BDT61F Datasheet Preview

BDT61F Datasheet

NPN Transistor

No Preview Available !

isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
BDT61F
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 6mA
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
VCB= 40V; IE= 0; TC= 150
ICEO
Collector Cutoff Current
VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A ; VCE= 3V
hFE-2
DC Current Gain
IC= 1.5A ; VCE= 3V
hFE-3
DC Current Gain
IC= 4A ; VCE= 3V
MIN TYP. MAX UNIT
80
V
2.5
V
2.5
V
0.2
mA
1.0
0.2
mA
5
mA
2000
750
1000
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number BDT61F
Description NPN Transistor
Maker INCHANGE
Total Page 2 Pages
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BDT61F Datasheet PDF





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