BDY46 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage-.
| Part number | BDY46 |
|---|---|
| Datasheet | BDY46-INCHANGE.pdf |
| File Size | 207.75 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage-.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
BDY46 | Bipolar NPN Device | Seme LAB |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| BDY42 | NPN Transistor |
| BDY43 | NPN Transistor |
| BDY44 | NPN Transistor |
| BDY45 | NPN Transistor |
| BDY47 | NPN Transistor |
| BDY48 | NPN Transistor |
| BDY49 | NPN Transistor |
| BDY25 | NPN Transistor |
| BDY26 | NPN Transistor |
| BDY27 | NPN Transistor |