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BDY46 - Silicon NPN Power Transistor

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Part number BDY46
Manufacturer INCHANGE
File Size 207.75 KB
Description Silicon NPN Power Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min.) DC Current Gain- : hFE=20(Min.)@IC = 2A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC = 15A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation
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